HETEROSTRUCTURE FOR TRANSLUCENT PHOTOCATHODE

摘要

FIELD: physics.SUBSTANCE: claimed heterostructure comprises substrate of GaAs, first ply of GaAs of p-conductivity, second ply of AlGaAs of p-conductivity. Note here that first ply of AlGaAs is a locking composition of AlGaAs of p-conductivity with concentration Pof acceptor dopant. Active ply of GaAs features concentration Pof acceptor dopant. Second ply of AlGaAs is a buffer composition AlGaAs with concentration Pof acceptor dopant. Transition ply is arranged between active and buffer plies of p-conductivity and composition varying form GaAs to AlGaAs. Note here that aluminium content variation starting from the boundary with active ply to that with buffer ply is a monotone increasing and continuous function Fof transition ply depth. Acceptor dopant concentration is a monotone decreasing continuous function Fof transition ply depth starting from concentration Pnearby the boundary with active ply to concentration Pnearby the boundary with buffer ply.EFFECT: higher quantum efficiency and integral response of photocathode.2 cl, 3 dwg