| 摘要 |
Provided are a resistance random access memory device and a manufacturing method thereof. The resistance random access memory device includes a substrate; an inactive electrode layer which is located on the substrate, and includes an inactive material; a resistance change layer which is located on the inactive electrode layer; and is in a state which can be changed according to the formation and extinction of a metal filament; and an active electrode layer which is located on the resistance change layer, and includes the active metal material. The resistance change layer is amorphous, and includes resistivity in a range of 1 kΩm to 1 MΩm. Therefore, in a CBM device, distribution features of the device can be improved by using metal nitride instead of an existing material as the material of the resistance change layer, thereby obtaining improved distribution features of SET and RESET voltages, and HRS and LRS currents. |
