| 摘要 |
<p>The invention relates to a reactor device (1) for chemical vapor deposition, including a reaction chamber (4) having a side wall (19) and a substrate stand (5) having a peripheral surface (5b) and a main surface (5a) facing a reactive gas injector (30), the injector (30) and said surface (5a) defining a work space (60) therebetween. The substrate stand (5) is arranged in the reaction chamber (4) such as to form an annular passage (107) between the peripheral surface (5b) of the substrate stand (5) and the side wall (19) of the reaction chamber (4). A system (49) for discharging gases is in fluid connection with the reaction chamber (4) by means of an outlet (49a) arranged in the side wall (19) facing the work space (60). A purge gas injector (105) includes an injection channel (103) defined by the side wall (19) of the chamber and a first wall of an additional part (101), leading into the reaction chamber (4) through an annular opening (106), the side wall (19) and the first wall (113) being parallel in a portion (103c) of the channel including the opening (106). A laminar flow of purge gas (200) is injected through the annular opening (106) and flows in said annular passage (107) to an opening (49a).</p> |
