发明名称 LOAD PORT
摘要 PROBLEM TO BE SOLVED: To provide a load port capable of performing purge processing that achieves a high reaching concentration of a predetermined gas atmosphere in a short time, and of improving the work efficiency.SOLUTION: Provided is a load port 1 that is provided adjacently to a semiconductor manufacturing device in a clean room, and that receives a transported FOUP 9 and ejects and inserts a wafer stored in the FOUP 9 between the inside of the semiconductor manufacturing device and the inside of the FOUP 9 via a carrying in/out port 91 formed on a front surface of the FOUP 9. The load port 1 comprises: a frame 2 with an opening 21 communicated with the carrying in/out port 91 of the FOUP 9; a door part 3 that can open and close the opening 21; and a chamber 7 that can shield the opening 21 opened by the door part 3 and communicated with the carrying in/out port 91, from a front surface of the FOUP 9. A gas can be injected into the FOUP 9.
申请公布号 JP2015207786(A) 申请公布日期 2015.11.19
申请号 JP20150126707 申请日期 2015.06.24
申请人 SINFONIA TECHNOLOGY CO LTD 发明人 NATSUME MITSUO;OCHIAI MITSUTOSHI;MIZOKAWA TAKUMI
分类号 H01L21/677;B65G49/00 主分类号 H01L21/677
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