THIN-FILM LAMINATION STRUCTURE OF COMPOUND SEMICONDUCTOR, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD OF MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To provide a thin-film lamination structure of a compound semiconductor that can increase an In composition and that has a structure with reduced dislocation.SOLUTION: Provided is a structure obtained by sequentially laminating a plurality of InGaN layers 5, 9, and 13 by using mask materials 2, 6, and 10. A GaN layer 3 and InGaN layers 7 and 11 are configured by island-like parts with triangular cross sections and that are grown through openings 2a, 6a, 10a of each mask 2, 6, 10, and high-In composition InGaN thin films 5, 9, and 13 are formed thereon. Thereby, threading dislocation existing inside can be extended in parallel to a growth direction, and the dislocation can be reduced. In addition, with respect to the plurality of InGan layers 5, 9, and 13, the In composition becomes larger as it goes above. That is, when a composition of the m-th (m is a natural number) InGaN layer is defined as InGaN, xm