Structure and Method for Semiconductor Device

摘要

Provided is a semiconductor device and methods of forming the same. The semiconductor device includes a substrate having source/drain regions and a channel region between the source/drain regions; a gate structure over the substrate and adjacent to the channel region; source/drain contacts over the source/drain regions and electrically connecting to the source/drain regions; and a contact protection layer over the source/drain contacts. The gate structure includes a gate stack and a spacer. A top surface of the source/drain contacts is lower than a top surface of the spacer, which is substantially co-planar with a top surface of the contact protection layer. The contact protection layer prevents accidental shorts between the gate stack and the source/drain regions when gate vias are formed over the gate stack. Therefore, gate vias may be formed over any portion of the gate stack, even in areas that overlap the channel region from a top view.

主权项

1. A method of forming a semiconductor device, the method comprising:
providing a substrate with a gate stack formed thereon, the substrate having a source region, a drain region, and a channel region between the source and drain regions, the gate stack disposed adjacent to the channel region, a top surface and sidewalls of the gate stack being covered by a spacer; forming a first contact feature over the substrate, the first contact feature electrically connecting to at least one of the source region and the drain region, a top surface of the first contact feature being lower than a top surface of the spacer; and forming a first dielectric layer over the first contact feature.