RESISTIVE MEMORY STRUCTURE FOR SINGLE OR MULTI-BIT DATA STORAGE

摘要

A resistive memory structure comprises at least one resistive memory element configured to store one or more bits of data and a circuit electrically connected to the resistive memory element for use in performing at least one of a read or write operation on the at least one resistive memory element. The circuit includes a resistor electrically connected in series to the resistive memory element thereby forming a voltage divider and electrical node therebetween, and an interpretation circuit electrically connected to the electrical node formed between the resistive memory element and the resistor. The interpretation circuit is configured to interpret a voltage at the electrical node and to determine a resistive state of the resistive memory element based on the voltage at the electrical node.

主权项

1. A resistive memory structure, comprising:
at least one resistive memory element configured to store one or more bits of data; and a circuit electrically connected to the resistive memory element for use in performing at least one of a read or write operation on the at least one resistive memory element, the circuit including:
a resistor electrically connected in series to the resistive memory element thereby forming a voltage divider and electrical node therebetween; andan interpretation circuit electrically connected to the electrical node formed between the resistive memory element and the serially connected resistor, the interpretation circuit configured to interpret a voltage at the electrical node and to determine a resistive state of the resistive memory element based on the voltage at the electrical node.