FIELD-BIASED SECOND HARMONIC GENERATION METROLOGY

摘要

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.

主权项

1. A system for optically interrogating a surface of a sample while applying a bias to said sample, said system comprising:
a first optical source configured to emit probing radiation, said first optical source disposed so as to direct said probing radiation onto said surface of said sample; a first contact electrical probe configured to form electrical contact with said sample; a second capacitively coupled probe configured to capacitively coupled with said sample without touching said surface of said sample; a power supply configured to apply said bias to said sample via said first contact electrical probe and said second capacitively coupled probe; an optical detector configured to detect second harmonic generated light from the sample; and processing electronics configured to determine a characteristic of the detected second harmonic generated light.