发明名称 |
WAFER METROLOGY TECHONOLOGIES |
摘要 |
Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information. |
申请公布号 |
US2015330909(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201514690279 |
申请日期 |
2015.04.17 |
申请人 |
FemtoMetrix, Inc. |
发明人 |
Koldiaev Viktor;Kryger Marc;Changala John |
分类号 |
G01N21/88;G01N21/94;G01N21/95 |
主分类号 |
G01N21/88 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Santa Ana CA US |