发明名称 LIFT-OFF METHOD
摘要 A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, the optical device layer being formed on the front side of an epitaxy substrate through a buffer layer. A transfer substrate is bonded through a bonding layer to the front side of the optical device layer of the optical device wafer, thereby forming a composite substrate. A pulsed laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer is applied from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer, and the epitaxy substrate is peeled from the optical device layer, thereby transferring the optical device layer to the transfer substrate. Ultrasonic vibration is applied to the composite substrate in transferring the optical device layer.
申请公布号 US2015328872(A1) 申请公布日期 2015.11.19
申请号 US201514716149 申请日期 2015.05.19
申请人 DISCO CORPORATION 发明人 Koyanagi Tasuku;Takeda Noboru;Morikazu Hiroshi
分类号 B32B37/00;H01L33/00;B32B43/00;H01L21/683 主分类号 B32B37/00
代理机构 代理人
主权项 1. A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, said optical device layer being formed on a front side of an epitaxy substrate through a buffer layer, said lift-off method comprising: a transfer substrate bonding step of bonding said transfer substrate through a bonding layer to a front side of said optical device layer of said optical device wafer, thereby forming a composite substrate; a buffer layer breaking step of applying a pulsed laser beam having a wavelength transmissive to said epitaxy substrate and absorptive to said buffer layer from a back side of said epitaxy substrate to said buffer layer after performing said transfer substrate bonding step, thereby breaking said buffer layer; and an optical device layer transferring step of peeling said epitaxy substrate from said optical device layer after performing said buffer layer breaking step, thereby transferring said optical device layer to said transfer substrate; wherein ultrasonic vibration is applied to said composite substrate in performing said optical device layer transferring step.
地址 Tokyo JP