发明名称 NITRIDE SEMICONDUCTOR LIGHT EMISSION DIODE
摘要 PROBLEM TO BE SOLVED: To provide a specific shape of a nitride semiconductor light emission diode having a high light extraction efficiency.SOLUTION: A nitride semiconductor light emission diode has a triangular shape comprising a side BC, a side CA and a side AB which have a length La, a length Lb and a length Lc respectively in plan view. The corners which confront the side BC, the side CA and the side AB respectively have an angle α, an angle &bgr; and an angle γ, respectively. An angle &thetas; is formed between the c axis and the length direction of the side BC. The length Lb is equal to the length Lc. Any one of the following groups Aa and Ab is satisfied. The group Aa: 20°≤angle α≤40° (Ia) and 0°≤angle &thetas;≤40° (IIa), and the group Ab: 90°≤angle α≤130° (Ib) and 50°≤angle &thetas;≤90° (IIb).
申请公布号 JP2015207752(A) 申请公布日期 2015.11.19
申请号 JP20140175252 申请日期 2014.08.29
申请人 PANASONIC IP MANAGEMENT CORP 发明人 YAMADA ATSUSHI;INOUE AKIRA
分类号 H01L33/22;H01L33/18;H01L33/32 主分类号 H01L33/22
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