| 发明名称 |
SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHODS FOR PRODUCING THESE |
| 摘要 |
A sputtering target that includes an oxide including an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al) and comprises a homologous structure compound represented by In2O3(ZnO)n (n is 2 to 20) and a spinet structure compound represented by Zn2SnO4. |
| 申请公布号 |
US2015332902(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201314436824 |
申请日期 |
2013.10.16 |
| 申请人 |
Idemitsu Kosan Co, Ltd. |
发明人 |
EBATA Kazuaki |
| 分类号 |
H01J37/34;H01L27/12;C23C14/34 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A sputtering target that comprises an oxide comprising an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al) and comprises a homologous structure compound represented by In2O3(ZnO)n (n is 2 to 20) and a spinel structure compound represented by Zn2SnO4. |
| 地址 |
Chiyoda-ku, Tokyo JP |
