发明名称 ELECTRON BEAM WRITING APPARATUS AND ELECTRON BEAM WRITING METHOD
摘要 An electron beam writing apparatus includes: a first aperture plate that shapes an electron beam emitted from an electron gun assembly; a second aperture plate onto which an electron beam of an aperture plate image passing through the first aperture plate is projected; and a first shaping deflector and a second shaping deflector which are provided between the first aperture plate and the second aperture plate, respectively, deflect an electron beam, control an irradiation position of the aperture plate image on the second aperture plate, and determine a shot shape and a shot size. The first shaping deflector deflects an electron beam such that the aperture plate image is positioned at a determined position in accordance with a shot shape and a shot size. The second shaping deflector deflects an electron beam deflected by the first shaping deflector and controls formation of a desirable shot size.
申请公布号 US2015332890(A1) 申请公布日期 2015.11.19
申请号 US201514614948 申请日期 2015.02.05
申请人 NuFlare Technology, Inc. 发明人 MATSUI Hideki
分类号 H01J37/147;H01J37/317 主分类号 H01J37/147
代理机构 代理人
主权项 1. An electron beam writing apparatus comprising: an electron gun assembly that emits an electron beam so as to perform pattern writing on a sample; a first aperture plate that shapes the electron beam; a second aperture plate onto which the electron beam of an aperture plate image passing through the first aperture plate is projected; and a first shaping deflector and a second shaping deflector which are provided between the first aperture plate and the second aperture plate, respectively, deflect the electron beam, control an irradiation position of the aperture plate image on the second aperture plate, and determine a shape and a shot size of the electron beam that passes through the second aperture plate, wherein the first shaping deflector deflects an electron beam such that the aperture plate image is positioned at a determined position in accordance with a shape and a shot size of an electron beam with which the sample is irradiated, and wherein the second shaping deflector deflects an electron beam deflected by the first shaping deflector and controls formation of a desirable shot size.
地址 Yokohama-shi JP