| 主权项 |
1. An electronic device including a semiconductor memory unit, wherein the semiconductor memory unit comprises:
a word line driving unit suitable for driving a plurality of word lines; a first cell array arranged at one side of the word line driving unit, wherein the first cell array includes a plurality of first storage cells each having a variable resistance element and being selected when a corresponding word line is activated among the plurality of word lines, and a first reference resistance element having a first resistance value and being arranged adjacent to the word line driving unit; a second cell array arranged at the other side of the word line driving unit, wherein the second cell array includes a plurality of second storage cells, each having a variable resistance element and being selected when a corresponding word line is activated among the plurality of word lines, and a second reference resistance element having a second resistance value and being arranged adjacent to the word line driving unit; a bias voltage generation unit arranged between the first cell array and the second cell array and suitable for generating a bias voltage based on currents flowing through the first reference resistance element and the second reference resistance element; and a read control unit suitable for reading data of storage cells selected among the plurality of first and second storage cells based on the bias voltage. |
