LITHOGRAPHIC STACK EXCLUDING SiARC AND METHOD OF USING SAME

摘要

A lithographic stack over a raised structure (e.g., fin) of a non-planar semiconductor structure, such as a FinFET, includes a bottom layer of spin-on amorphous carbon or spin-on organic planarizing material, a hard mask layer of a nitride and/or an oxide on the spin-on layer, a layer of a developable bottom anti-reflective coating (dBARC) on the hard mask layer, and a top layer of photoresist. The stack is etched to expose and recess the raised structure, and epitaxial structure(s) are grown on the recess.

主权项

1. A method, comprising:
providing a non-planar semiconductor structure, the structure comprising a semiconductor substrate, at least one raised semiconductor structure coupled to the substrate, at least one dummy gate structure encompassing an exposed portion of the at least one raised structure, and a lithographic stack conformally covering the non-planar structure; wherein the lithographic stack comprises a layer of spin-on material, a hard mask layer above the spin-on layer, a layer of developable bottom anti-reflective coating (dBARC) above the hard mask layer and a layer of lithographic blocking material above the dBARC layer; and etching the lithographic stack to expose at least one region of one or more of the at least one raised structure.