UV LIGHT EMITTING DEVICE

摘要

A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.

主权项

1. An ultraviolet (UV) light emitting diode, comprising:
an n-type contact layer comprising an AlGaN layer or an AlInGaN layer; a p-type contact layer comprising an AlGaN layer or an AlInGaN layer; and a multi-quantum well structured active area disposed between the n-type contact layer and the p-type contact layer, the active area comprising well layers and barrier layers alternately stacked, wherein: the barrier layers are formed of AlInGaN or AlGaN and comprise Al in an amount of 10% to 30%; at least one of the barrier layers disposed between the well layers has a smaller thickness than at least one of the well layers; and at least one of the barrier layers disposed between the well layers has a thickness and a band gap provided in a set ratio to prevent the electrons and the holes injected into and confined in a first well layer adjacent to a barrier layer from spreading into a second adjacent well layer.