| 发明名称 |
SEMICONDUCTOR DEVICE WITH COMPENSATION STRUCTURE |
| 摘要 |
A semiconductor device includes a semiconductor body, which includes transistor cells and a drift zone between a drain layer and the transistor cells. The drift zone includes a compensation structure. Above a depletion voltage a first output charge gradient obtained by increasing a drain-to-source voltage from the depletion voltage to a maximum drain-to-source voltage deviates by less than 5% from a second output charge gradient obtained by decreasing the drain-to-source voltage from the maximum drain-to-source voltage to the depletion voltage. At the depletion voltage the first output charge gradient exhibits a maximum curvature. |
| 申请公布号 |
US2015333169(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201414277506 |
申请日期 |
2014.05.14 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Willmeroth Armin;Hirler Franz;Fischer Bjoern;Weyers Joachim |
| 分类号 |
H01L29/78;H01L29/06;H02M1/08 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor body comprising transistor cells and a drift zone between a drain layer and the transistor cells, the drift zone comprising a compensation structure; wherein above a depletion voltage a first output charge gradient obtained by increasing a drain-to-source voltage from the depletion voltage to a maximum drain-to-source voltage deviates by less than 5% from a second output charge gradient obtained by decreasing the drain-to-source voltage from the maximum drain-to-source voltage to the depletion voltage, and at the depletion voltage the first output charge gradient exhibits a maximum curvature. |
| 地址 |
Villach AT |
