发明名称 In-Situ Block Folding for Nonvolatile Memory
摘要 In a nonvolatile memory, hybrid blocks are initially written with only lower page data. The hybrid blocks later have middle and upper page data written. For high speed writes, data is written to a hybrid block and two or more Single Level Cell (SLC) blocks. The data from the SLC blocks are copied to the hybrid block at a later time in a folding operation.
申请公布号 US2015331626(A1) 申请公布日期 2015.11.19
申请号 US201414520909 申请日期 2014.10.22
申请人 SanDisk Technologies Inc. 发明人 Avila Chris;Dusija Gautam;Raghu Deepak;Hsu Cynthia;Chen Changyuan;Moogat Farookh
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. A method of operating a Multi-Level Cell (MLC) nonvolatile memory array that stores more than two bits per page, comprising: programming a first logical page of data one-bit-per-cell in a first physical page using a first programming scheme; programming a second logical page of data one-bit-per-cell in a second physical page using a second programming scheme; programming a third logical page of data one-bit-per-cell in a third physical page using the second programming scheme; subsequently, copying the second and third logical pages of data to the first physical page where they are programmed with the first logical page; and marking the second physical page and the third physical page as obsolete.
地址 Plano TX US