IMPROVED SRAM STORAGE UNIT BASED ON DICE STRUCTURE

摘要

An improved SRAM storage unit based on a DICE structure. The unit comprises the following structures: four phase inverter structures and a transmission structure. Each phase inverter structure consists of a PMOS transistor and an NMOS transistor connected in series. A storage node is formed between a drain of each PMOS transistor and a drain of each NMOS transistor. Each storage node controls a gate voltage of an NMOS transistor of another phase inverter structure and a gate voltage of a PMOS transistor of still another phase inverter structure. The transmission structure consists of four NMOS transistors. Sources, gates and drains of the four NMOS transistors are separately connected to a bit line/inverse phase bit line, a word line, and a storage node. By using the improved SRAM storage unit based on a DICE structure, the defects that the static noise margin of a traditional six-transistor unit structure is small and the transmission is error-prone are avoided, the problem that an existing SRAM storage unit based on a DICE structure is easily influenced by an electrical level of the storage node is solved and the reliability of the storage unit is improved.