| 摘要 |
Provided is a planar nano-oscillator array having a phase self-locking function, comprising two or more planar nano-oscillators which are arranged in parallel. The two oscillators are connected by a planar resistor and capacitor, and a structure thereof comprises: electrodes (1, 3); respectively introducing two pairs of horizontally arranged parallel insulation notch grooves (2, 9) into two-dimensional electron gas layers (4, 7), so as to form oscillation channels (5, 8); vertically arranging a separating insulation notch groove, so that a planar resistor A with a low resistance value which is connected to the electrode (1) is formed at a left side, and a planar resistor B with a low resistance value which is connected to the electrode (3) is formed at a right side; and arranging, between the two oscillators, an insulation capacitance notch groove (10) which is parallel to the oscillation channels (5, 8), insulating materials having a high dielectric constant being filled therein. The oscillator is manufactured on an AlGaN/GaN structure plane, and comprises an insulation substrate (14), a GaN layer (11), a two-dimensional electron gas layer (12) on an AlGaN/GaN heterogenous interface, and an AlGaN layer (13) in sequence. |
