| 摘要 |
A method for manufacturing a three-dimensional semiconductor device comprises the steps of: forming a stack structure of a first material layer and a second material layer on a substrate of a storage unit region; etching the stack structure and forming multiple hole grooves; forming channel layers in the multiple hole grooves; and annealing at least one surface of the channel layers so as to reduce a surface roughness and an interface state. According to the method for manufacturing a three-dimensional semiconductor device, a pseudo channel sacrificial layer is introduced to perform interface processing on the surface and the back surface of a channel to suppress forming of the interface state, and/or channel surface and back surface buffering layers are introduced in the processing procedure, so that the roughness of the surface of the channel is reduced, the channel mobility is improved, and the reliability of the storage unit is improved while a channel current is increased. |
