NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To achieve on an independent substrate composed of a nitride semiconductor, a nitride semiconductor substrate on which a nitride semiconductor layer which contains a C atom as an impurity and has favorable crystallinity is generated.SOLUTION: A nitride semiconductor substrate manufacturing method comprises: a process of preparing a base substrate 10; and a process of forming on the base substrate, a carbon-containing nitride semiconductor layer which contains carbon contained in an organic metal to be a material of a nitride semiconductor and has a half maximum full-width (FWHM) of an X-ray rocking curve of a (0002) plane is equal to or less than 55 arcsec by growing the nitride semiconductor under an optimized growth condition.