发明名称 |
METHOD FOR FABRICATING A SEMI-FLOATING GATE TRANSISTOR |
摘要 |
A semi-floating gate transistor structure includes a substrate, a first N-well region and a second N-well region separated from each other in the substrate, and a gate oxide layer on the substrate. The gate oxide layer includes a separation groove disposed on the first N-well region. The semi-floating gate transistor structure further includes a P-type doped floating gate having a first portion filling the separation groove and a second portion integrally formed on the first portion. The first portion of the P-type doped floating gate and the first N-well region form a pn-junction diode. |
申请公布号 |
US2015333079(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201514631838 |
申请日期 |
2015.02.25 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
PENG KUN |
分类号 |
H01L27/115;H01L21/28;H01L29/66;H01L27/105;H01L29/423 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Shanghai CN |