METHOD FOR MANUFACTURING A TFT ARRAY SUBSTRATE COMPRISING A ZINC OXIDE SEMICONDUCTOR LAYER AND AN OHMIC CONTACT LAYER

摘要

A method for manufacturing thin film transistor array substrate is disclosed. The method includes sequentially depositing a semiconductor layer and an ohmic contact layer on the base substrate formed with a gate insulator and patterning the semiconductor layer and the ohmic contact layer, wherein the material of the semiconductor layer is zinc oxide, and the material of the ohmic contact layer is GaxZn1-xO, where 0

主权项

1. A method for manufacturing a thin film transistor (TFT) array substrate, which comprises a plurality of pixel units, for each pixel unit the method comprising:
forming a gate metal layer on a base substrate and forming a pattern comprising a gate electrode and a gate line by patterning the gate metal layer; forming a gate insulator on the base substrate; sequentially depositing a semiconductor layer and an ohmic contact layer on the base substrate formed with the gate insulator and patterning the semiconductor layer and the ohmic contact layer, wherein the material of the semiconductor layer is zinc oxide, and the material of the ohmic contact layer is GaxZn1-xO, where 0