Method of Forming High-K Gates Dielectrics

摘要

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; injecting a first precursor and forming an interfacial layer on the substrate; and injecting a second precursor and performing a thermal treatment for forming an interface layer on the interfacial layer.

主权项

1. A method for fabricating semiconductor device, comprising:
providing a substrate; injecting a first precursor and forming an interfacial layer on the substrate; and injecting a second precursor and performing a thermal treatment for forming an interface layer on the interfacial layer after forming the interfacial layer on the substrate, wherein the thickness of the interface layer is 1/10 of the total thickness of the interfacial layer and the interface layer.