Semiconductor Processing Methods, and Methods for Forming Silicon Dioxide

摘要

Some embodiments include methods for semiconductor processing. A semiconductor substrate may be placed within a reaction chamber. The semiconductor substrate may have an inner region and an outer region laterally outward of said inner region, and may have a deposition surface that extends across the inner and outer regions. The semiconductor substrate may be heated by radiating thermal energy from the outer region to the inner region. The heating may eventually achieve thermal equilibrium. However, before thermal equilibrium of the outer and inner regions is reached, and while the outer region is warmer than the inner region, at least two reactants are sequentially introduced into the reaction chamber. The reactants may together form a single composition on the deposition surface through a quasi-ALD process.

主权项

1. A semiconductor processing method, comprising:
providing at least one semiconductor substrate within a heating apparatus, said heating apparatus having a chamber which receives the at least one semiconductor substrate, having a sidewall around the chamber, and having one or more heating modules that heat the sidewall; the at least one semiconductor substrate having a central region radially surrounded by an outer region; increasing a temperature within the chamber, the increasing of the temperature comprising passing heat from the sidewall to the at least one semiconductor substrate; the heat migrating from the outer region to the central region; and while the outer region is not in thermal equilibrium with the central region such that a temperature gradient exists between the outer region and the central region, utilizing multiple separate and substantially discrete steps of a deposition sequence to form a composition that extends across at least a portion of the outer region of the semiconductor substrate and across at least a portion of the central region of the semiconductor substrate.