SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD

摘要

A substrate processing method includes forming a first hole in a first surface of a silicon substrate to have a depth that it does not extend through the substrate and forming a second hole in a second surface to make the second hole to communicate with the first hole, so that a through hole formed of the first and second holes is formed in the substrate. The process of forming the second hole includes forming a communication portion wider than an opening of the first hole between the first and second holes after the second hole has been made to communicate with the first hole by dry etching.

主权项

1. A substrate processing method, comprising:
forming a first hole in a first surface of a silicon substrate so that the first hole has a depth so as not extend through the silicon substrate; and forming a second hole in a second surface that opposes the first surface by performing dry etching in such a manner as to make the second hole to communicate with the first hole so a through hole, which is formed of the first hole and the second hole, is formed in the silicon substrate, wherein the through hole has a shape such that at least a portion of an opening end of the first hole is present within the second hole when the second surface is viewed in plan, and wherein the forming of the second hole includes forming a communication portion, which is wider than an opening of the first hole, between the first hole and the second hole, after the second hole has been made to communicate with the first hole by the dry etching.