| 摘要 |
The present disclosure relates to a solid-state imaging device configured to be capable of enabling further reduction in reflectance, a method for manufacturing said device, and an electronic instrument. The solid-state imaging device is provided with a semiconductor substrate having photoelectric converters that are formed in each of a plurality of pixels, and an anti-reflective structure provided on the light-incident-surface side where light is incident on the semiconductor substrate, a plurality of different types of protrusions of different height being formed on the anti-reflective structure. The anti-reflective structure is formed by etching the light-incident surface of the semiconductor substrate in a plurality of stages according to respectively different processing conditions. In the anti-reflective structure, second protrusions are formed between first protrusions having a predetermined height, said second protrusions being shorter than the first protrusions. This invention can be applied to, e.g., CMOS image sensors. |
