| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device that can be mixed and loaded in a circuit element having a microstructured circuit construction and a low junction withstanding voltage.SOLUTION: A first deep well DW1 and a second deep well DW2 are not confined by each other in a memory unit 1a, and voltages required for the operations of capacitive transistors 3a, 3b of the first well W1 and writing transistors 4a, 4b of the second well W2 can be individually applied to the first deep well DW1 and the second deep well DW2. Accordingly, the voltage difference between the first deep well DW1 and the first well W1 and the voltage difference between the second deep well DW2 and the second well W2 can be reduced to be smaller than the voltage difference (18[V]) at which a tunnel effect occurs, which can reduce the junction voltage between the first deep well DW1 and the first well W1 and the junction voltage between the second deep well DW2 and the second well W2. |
