| 摘要 |
An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor. |
| 主权项 |
1. A transistor, comprising:
an electrical contact structure comprising:
a plurality of n metal rectangles on n levels of metal, wherein the metal rectangle on an uppermost metal level of the electrical contact structure is wider and shorter than at least one other metal rectangle on a lower metal layer of the electrical contact structure; a gate structure comprising a plurality of gate rectangles oriented in the same direction; a plurality of source-drain diffusion regions, wherein each source-drain diffusion region is disposed adjacent to, and extends along length of, at least one of the gate rectangles, wherein at least one source-drain diffusion region is coupled to the electrical contact structure; and a metallic gate connection structure coupled to the gate structure, the metallic gate connection structure comprising:
a first metal rectangle on a first metal level, wherein the first metal rectangle is orientated perpendicular to the gate rectangles, and wherein the first metal rectangle is coupled to first ends of the gate rectangles;a second metal rectangle on the first metal level, wherein the second metal rectangle is orientated perpendicular to the gate rectangle, and wherein the second metal rectangle is coupled to second ends of the gate rectangles, opposite the first ends of the gate rectangles;a third metal rectangle on a second metal level, higher than the first metal level, wherein the third metal rectangle is coupled to first ends of the first and second metal rectangles;a fourth metal rectangle on the second metal level, wherein the fourth metal rectangle is coupled to second ends of the first and second metal rectangles, opposite the first ends of the first and second metal rectangles; anda fifth metal rectangle on a third metal level, higher than the second metal level, wherein the fifth metal rectangle is coupled to first ends of the third and fourth metal rectangles. |
