METAL PAD OFFSET FOR MULTI-LAYER METAL LAYOUT

摘要

A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.

主权项

1. A method comprising:
forming a first dielectric layer over a semiconductor substrate, wherein the first dielectric layer includes a first metal pad; forming a second dielectric layer over the first dielectric layer, wherein the second dielectric layer includes a second metal pad that is not aligned with the first metal pad; forming a third dielectric layer over the second dielectric layer, wherein the third dielectric layer includes a third metal pad that is aligned with the first metal pad; forming a first via extending through the first and second dielectric layers, wherein the first via physically contacts the first and second metal pads; and forming a second via extending through the second and third dielectric layers, wherein the second via physically contacts the second and third metal pads.