SEMICONDUCTOR-SUBSTRATE PRODUCTION METHOD, AND SEMICONDUCTOR SUBSTRATE

摘要

Provided is a semiconductor-substrate production method in which the distribution profile of specific atoms implanted in a substrate in order to form amorphous layers can be suitably controlled. This semiconductor-substrate production method is provided with a polycrystalline-layer formation step in which a semiconductor polycrystalline layer is formed on the surface of a support substrate and/or the surface of a single crystal layer. The semiconductor-substrate production method is further provided with: an amorphous-layer formation step in which a first amorphous layer including specific atoms is formed by irradiating the surface of the support substrate with the specific atoms in a vacuum, and a second amorphous layer including specific atoms is formed by irradiating the surface of the single crystal layer with the specific atoms in a vacuum; a contact step in which the first amorphous layer and the second amorphous layer are brought into contact with each other to form a bonded substrate; and a heat treatment step in which the bonded substrate is heat-treated. The specific atoms are inert atoms which do not crystallize with compound semiconductors. The average crystal grain size of the polycrystalline layer(s) formed in the polycrystalline-layer formation step is less than that of the support substrate.