SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To solve a problem occurring in an SiC-JBS (Junction Barrier Schottky) having a recess that a high electric field is generated at an edge of a recess bottom part and leakage current at the time of reverse bias is increased.SOLUTION: A silicon carbide semiconductor device comprises: a plurality of recesses which are formed on a surface of a first conductivity type drift region and each of which has tapered lateral faces; second conductivity type p-type regions formed in regions which contact bottom faces and the lateral faces of the recesses; second conductivity type termination regions; an anode electrode; and a cathode electrode. A depth direction profile of an impurity in the p-type region on the bottom face of the recess has another peak at a place shallower than that in a depth direction profile of an impurity in the termination region.