METHOD OF MANUFACTURING EPITAXIAL WAFER AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing epitaxial wafer by which high quality epitaxial wafer can be obtained and a high quality epitaxial wafer.SOLUTION: The manufacturing method of epitaxial wafer includes the steps of: preparing a SiC substrate 10 which has a principal plane 10A and a principal plane 10B; placing the SiC substrate 10 on a susceptor 80 with the principal plane 10B facing a mounting place 82 of the susceptor 80; and forming a SiC layer over the principal plane 10A after completing the placing step of the SiC substrate 10. In the step of placing the SiC substrate 10, the SiC substrate 10 is placed on the susceptor 80 in a state that the principal plane 10B is kept separated away from the bottom face 84 (mounting place 82) between one end part 11 to the other end part 12.