发明名称 SENSOR INTEGRATION WITH AN OUTGASSING BARRIER AND A STABLE ELECTRICAL SIGNAL PATH
摘要 The present disclosure relates to a structure and method of forming a MEMS-CMOS integrated circuit with an outgassing barrier and a stable electrical signal path. An additional poly or metal layer is embedded within the MEMS die to prevent outgassing from the CMOS die. Patterned conductors formed by a damascene process and a direct bonding between the two dies provide a stable electrical signal path.
申请公布号 US2015329353(A1) 申请公布日期 2015.11.19
申请号 US201414276445 申请日期 2014.05.13
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Cheng Chun-Wen;Chu Chia-Hua
分类号 B81B7/00;B81C1/00 主分类号 B81B7/00
代理机构 代理人
主权项 1. An integrated circuit (IC) comprising: a semiconductor die comprising a first top surface and a first bottom surface; a MEMS die comprising a second top surface and a second bottom surface, wherein the MEMS die is disposed over the semiconductor die, and the first top surface is coupled to the second top surface; a cap bonded to the second bottom surface defining a cavity between the MEMS die and the cap; and an outgas barrier layer disposed within the MEMS die configured to prevent outgassing from the semiconductor die to the cavity.
地址 Hsin-Chu TW