发明名称 |
SENSOR INTEGRATION WITH AN OUTGASSING BARRIER AND A STABLE ELECTRICAL SIGNAL PATH |
摘要 |
The present disclosure relates to a structure and method of forming a MEMS-CMOS integrated circuit with an outgassing barrier and a stable electrical signal path. An additional poly or metal layer is embedded within the MEMS die to prevent outgassing from the CMOS die. Patterned conductors formed by a damascene process and a direct bonding between the two dies provide a stable electrical signal path. |
申请公布号 |
US2015329353(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201414276445 |
申请日期 |
2014.05.13 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Cheng Chun-Wen;Chu Chia-Hua |
分类号 |
B81B7/00;B81C1/00 |
主分类号 |
B81B7/00 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit (IC) comprising:
a semiconductor die comprising a first top surface and a first bottom surface; a MEMS die comprising a second top surface and a second bottom surface, wherein the MEMS die is disposed over the semiconductor die, and the first top surface is coupled to the second top surface; a cap bonded to the second bottom surface defining a cavity between the MEMS die and the cap; and an outgas barrier layer disposed within the MEMS die configured to prevent outgassing from the semiconductor die to the cavity. |
地址 |
Hsin-Chu TW |