| 摘要 |
The present invention relates to a power semiconductor device (10), comprising a power semiconductor element (12) with an upper side (14) and with a lower side (16), the upper side (14) being located opposite to the lower side (16); a first electrode (18) and a second electrode (20), wherein the power semiconductor element (12) is arranged between the first electrode (18) and the second electrode (20) such, that the upper side (14) is in electrical contact to the first electrode (18), and that the lower side (16) is in electrical contact to the second electrode (20), and wherein a housing arrangement (28) is provided at least comprising the first electrode (18), the second electrode (20) and an electrical insulator (30), wherein a rupture disk (32) is provided in the housing arrangement (28). The rupture disk (32) is positioned at a flange (34) and the flange (34) connects the first electrode (18) with a further part of the housing arrangement (28), in particular with the electrical insulator (30). A power semiconductor device (10) according to the present invention may enable a controlled escape of high pressures in turn preventing the power semiconductor device (10) from explosion in a failure mode. |
