发明名称 薄膜トランジスタアレイおよびその製造方法
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor array of large accumulation capacity, with less power consumption, and high display quality, and to provide a method of manufacturing the thin film transistor array at a high throughput with good alignment precision.SOLUTION: A thin film transistor array includes a plurality of thin film transistors containing an insulation substrate, a source electrode, a drain electrode formed with a predetermined interval against the source electrode, a pixel electrode connected to the drain electrode, and a semiconductor pattern formed at least in a gap between the source electrode and the drain electrode. It also includes a plurality of source wirings connected to the source electrode and a plurality of liquid repellent insulation layer patterns that contain a material which repels the semiconductor pattern, being formed in stripe with the semiconductor pattern in between.
申请公布号 JP2015207704(A) 申请公布日期 2015.11.19
申请号 JP20140088322 申请日期 2014.04.22
申请人 发明人
分类号 H01L21/336;G09F9/00;G09F9/30;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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