发明名称 ウェーハの加工方法
摘要 PROBLEM TO BE SOLVED: To provide a wafer processing method that can reduce a risk that a parting defect occurs when external force is applied to a wafer to part the wafer.SOLUTION: A method of processing a wafer which comprises a substrate and a laminate formed on the substrate and on which devices are formed in respective areas comparted by parting schedule lines which intersect one another in the form of a grid by the laminate comprises a cut groove forming step of forming cut grooves by cutting the laminate along the parting schedule lines with a cutting blade, a reformed layer forming step of applying a laser beam having a wavelength having light transmissivity to the substrate from the back surface side of the wafer along the parting schedule lines while the focal point of the laser beam is positioned to the inside of the substrate, thereby forming a reformed layer along the parting schedule lines in the substrate after the cut groove forming step is executed, and a parting step of applying external force to the wafer to part the wafer into individual chips along the parting schedule lines after the reformed layer forming step is executed.
申请公布号 JP2015207604(A) 申请公布日期 2015.11.19
申请号 JP20140085822 申请日期 2014.04.17
申请人 发明人
分类号 H01L21/301;B23K26/53 主分类号 H01L21/301
代理机构 代理人
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