METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating semiconductor device is disclosed. The method includes the steps of first providing a substrate, in which the substrate includes a SONOS region and a EEPROM region. Next, a first gate layer is formed in the SONOS region and the EEPROM region, the first gate layer is patterned by removing the first gate layer from the SONOS region and forming a floating gate pattern in the EEPROM region, an ONO layer is formed in the SONOS region and the EEPROM region, a second gate layer is formed on the ONO layer of the SONOS region and the EEPROM region, the second gate layer and the first gate layer are patterned to form a floating gate and a control gate in the EEPROM region, and the second gate layer is patterned to form a first gate in the SONOS region.

主权项

1. A method for fabricating semiconductor device, comprising:
providing a substrate, wherein the substrate comprises a SONOS region and a EEPROM region; forming a first gate layer over the SONOS region and the EEPROM region; patterning the first gate layer by removing the first gate layer from the SONOS region and forming a floating gate pattern in the EEPROM region; forming an ONO layer over the SONOS region and the EEPROM region; forming a second gate layer on the ONO layer of the SONOS region and the EEPROM region; patterning the second gate layer and the first gate layer to form a floating gate and a control gate in the EEPROM region; and patterning the second gate layer to form a first gate in the SONOS region.