SEMICONDUCTOR DEVICES AND FABRICATION METHOD THEREOF

摘要

A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region; and forming at least one first dummy gate in the first region and at least one second dummy gate in the second region. Further, the method includes forming a dielectric layer with a top surface leveling with a surface of the first dummy gate on the semiconductor substrate; oxidizing a top portion of the second dummy gate to form a protective layer to prevent over-polishing on the second region; removing the first dummy gate to form a first gate trench; forming a first metal layer to fill the first gate trench and cover the protective layer and the dielectric layer; and removing a portion of the first metal layer higher than the dielectric layer to form a first metal gate in the first gate trench.

主权项

1. A method for fabricating a semiconductor device, comprising:
providing a semiconductor substrate having a first region and a second region; forming at least one first dummy gate on the semiconductor substrate in the first region and at least one second dummy gate on the semiconductor substrate in the second region; forming a dielectric layer with a top surface leveling with top surfaces of the first dummy gate and the second dummy gate on the semiconductor substrate; oxidizing a top portion of the second dummy gate to form a protective layer to prevent over-polishing on the second region on the second dummy gate; removing the first dummy gate to form a first gate trench; forming a first metal layer to fill the first gate trench and cover the protective layer and the dielectric layer in the second region; and removing a portion of the first metal layer higher than the dielectric layer to form a first metal gate in the first gate trench.