| 发明名称 |
METHOD FOR MANUFACTURING A NANOLITHOGRAPHY MASK |
| 摘要 |
The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps:
partially irradiating said copolymer film to form a first irradiated area and a second non-irradiated area in said copolymer film, thentreating said copolymer film in a developer solvent to selectively remove at least said PMMA nanodomains of said first irradiated area of said copolymer film. |
| 申请公布号 |
US2015331313(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201314654277 |
申请日期 |
2013.12.16 |
| 申请人 |
ARKEMA FRANCE ;COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
发明人 |
NAVARRO Christophe;ARGOUD Maxime;CHEVALIER Xavier;TIRON Raluca;GHARBI Ahmed |
| 分类号 |
G03F1/76;G03F7/32;G03F1/00 |
主分类号 |
G03F1/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said block copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, wherein said method comprises the following steps:
partially irradiating said block copolymer film to form first irradiated areas and non-irradiated areas in said block copolymer film, then treating said copolymer film in a developer solvent previously selected to selectively remove one or more nanodomains of said block copolymer film, said nanodomains being of different chemical composition, irradiated and/or non-irradiated, the selective removal consisting of removing at least said PMMA nanodomains of said irradiated areas of said block copolymer film. |
| 地址 |
Colombes FR |
