| 摘要 |
This invention discloses a HiNAND array scheme with multiple-level of bit lines (BLs) including metal3 global bit lines (GBLs), divided metal2 Segment bit lines (SBLs), and divided metal1block bit lines (BBLs) laid out in parallel to each other respectively for a plurality of NAND Strings. All other source lines or power lines connected to bottoms of corresponding String capacitances of GBLs, SBLs, and BBLs are associated with metal0 line laid out perpendicular to those BLs. Under the HiNAND array scheme, conventional one-WL Read and Program- Verify operations are replaced by multiple- WL and All-BL Read and Program- Verify operations executed with charge capacitance of SBLs being reduced to 1/10-1/20 of capacitance of GBLs to achieve DRAM-like faster operation, less operation stress, and lower power consumption. A preferred set of program biased voltages on the selected WL and remaining non-selected WLs associated with a Multiplier and a DRAM-like charge-sharing Latch Sensing Amplifier is proposed. |
