MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a transistor using an oxide semiconductor having high ion characteristics; and to provide a highly functional semiconductor device having a transistor capable of high-speed response and high-speed drive.SOLUTION: In a transistor having an oxide semiconductor, by introducing (adding) oxygen-vacancy-inducing factors to an oxide semiconductor layer, a source region and a drain region are selectively made to have low resistance. By introducing the oxygen-vacancy-inducing factors to the oxide semiconductor layer, an oxygen defect which functions as a donor can be effectively formed in the oxide semiconductor layer. It is preferable to introduce the oxygen-vacancy-inducing factors to be introduced by an ion implantation method using one or more metal elements selected from among titanium, tungsten and molybdenum.