发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor high-side driver including; an input terminal; an output terminal to be coupled to a load element; an output MOS transistor having a drain coupled to a power supply terminal, a source coupled to the output terminal and a gate; a sense MOS transistor having a drain coupled to the power supply terminal, a gate coupled to the gate of the output MOS transistor and a source; a control circuit coupled to the input terminal and provides a control signal to the gate of the output MOS transistor; and a voltage detection circuit which includes: a threshold voltage generation circuit having a first terminal coupled to the power supply terminal and a second terminal which generates a voltage lower than a voltage of the power supply terminal by a threshold voltage; and a comparator.
申请公布号 US2015333742(A1) 申请公布日期 2015.11.19
申请号 US201514808503 申请日期 2015.07.24
申请人 RENESAS ELECTRONICS CORPORATION 发明人 Nakajima Sakae
分类号 H03K3/353;H01L27/088;H01L27/02 主分类号 H03K3/353
代理机构 代理人
主权项 1. A semiconductor high-side driver comprising: a power supply terminal; an input terminal; an output terminal to be coupled to a load element; an output MOS transistor having a drain coupled to the power supply terminal, a source coupled to the output terminal and a gate; a sense MOS transistor having a drain coupled to the power supply terminal, a gate coupled to the gate of the output MOS transistor and a source; a control circuit coupled to the input terminal and provides a control signal to the gate of the output MOS transistor; and a voltage detection circuit which includes: a threshold voltage generation circuit having a first terminal coupled to the power supply terminal and a second terminal which generates a voltage lower than a voltage of the power supply terminal by a threshold voltage; anda comparator having: a first input coupled to the second terminal of the threshold voltage generation circuit;a second input coupled to the source of the sense MOS transistor; andan output for providing a detection signal, wherein the detection signal is of a high level when a voltage at the first input thereof is higher than a voltage at the second input thereof, and wherein the detection signal is of a low level when a voltage at the first input thereof is lower than a voltage at the second input thereof.
地址 Kawasaki-shi JP