发明名称 METHOD FOR HIGH-FREQUENCY AMPLIFIER USING POWER GAIN-BOOSTING TECHNIQUE
摘要 The present invention provides a power gain-boosting technique for an amplifier in order to compensate for the decrease of Gmag in a transistor at high frequencies. A power gain-boosting technique of the present invention comprises the steps of: finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition:;S21S12=Y21Y12=Z21Z12=-[(2U-1)+2U(U-1)];;embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching.
申请公布号 US2015333707(A1) 申请公布日期 2015.11.19
申请号 US201514590253 申请日期 2015.01.06
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 Lee Sang-Gug;Huu Bao Lam;Kim Suna;Lee Jeong Seon
分类号 H03F1/08;G06F17/50;H03F3/193 主分类号 H03F1/08
代理机构 代理人
主权项 1. A gain-boosting method for a high frequency amplifier, comprising the steps of: finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition:S21S12=Y21Y12=Z21Z12=-[(2U-1)+2U(U-1)]; embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching.
地址 Yuseong-gu KR
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