发明名称 |
METHOD FOR HIGH-FREQUENCY AMPLIFIER USING POWER GAIN-BOOSTING TECHNIQUE |
摘要 |
The present invention provides a power gain-boosting technique for an amplifier in order to compensate for the decrease of Gmag in a transistor at high frequencies. A power gain-boosting technique of the present invention comprises the steps of: finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition:;S21S12=Y21Y12=Z21Z12=-[(2U-1)+2U(U-1)];;embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching. |
申请公布号 |
US2015333707(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201514590253 |
申请日期 |
2015.01.06 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
Lee Sang-Gug;Huu Bao Lam;Kim Suna;Lee Jeong Seon |
分类号 |
H03F1/08;G06F17/50;H03F3/193 |
主分类号 |
H03F1/08 |
代理机构 |
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代理人 |
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主权项 |
1. A gain-boosting method for a high frequency amplifier, comprising the steps of:
finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition:S21S12=Y21Y12=Z21Z12=-[(2U-1)+2U(U-1)]; embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching. |
地址 |
Yuseong-gu KR |