发明名称 Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method
摘要 A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets which are for measuring overlay using X-ray scattering and small targets which are for measuring overlay by diffraction of visible radiation. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
申请公布号 US2015331336(A1) 申请公布日期 2015.11.19
申请号 US201514710443 申请日期 2015.05.12
申请人 ASML Netherlands B.V. 发明人 QUINTANILHA Richard;COENE Willem Marie Julia Marcel
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A substrate comprising: product features; and metrology targets configured to be used in measurement of a parameter of performance of a lithographic process used to form the product features and the metrology targets on the substrate, the metrology targets comprising: a first set of targets configured to be used in the measurement of the parameter using radiation having a wavelength longer than 150 nm and comprising: a first feature greater in size than smallest of the product features,a first subset of targets distributed across a first location, anda second subset of targets distributed across a second location; and a second set of targets, distributed across the first location, configured to be used in the measurement of the parameter using X-radiation and comprising a second feature substantially equal in size to the smallest of the product features.
地址 Veldhoven NL