发明名称 Method of Integrating All Active and Passive Optical Devices on Silicon-based Integrated Circuit
摘要 A method is provided to integrate all active and passive integrated optical devices on a silicon (Si)-based integrated circuit (IC). A Si-based substrate, instead of a Si-on-insulator (SOI) substrate, is used for integrating the devices. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems on integrating the electric circuit and the optical devices. The present invention can be used to develop a proactive optical transceivers on a standard chip; or, to fully and compatibly integrate all devices on a circuit for an optical communication chip.
申请公布号 US2015331187(A1) 申请公布日期 2015.11.19
申请号 US201414308797 申请日期 2014.06.19
申请人 National Tsing Hua University 发明人 Lee Ming-Chang;Tseng Chih-Kuo
分类号 G02B6/13;G02B6/136 主分类号 G02B6/13
代理机构 代理人
主权项 1. A method of integrating all active and passive optical devices on a silicon (Si)-based integrated circuit (IC), comprising steps of: (a1) providing a Si substrate; obtaining at least one electronic device on said Si substrate; and obtaining a first insulating layer to be covered on said Si substrate and said at least one electronic device; (b1) pattern-etching said first insulating layer to form a first groove on said Si substrate; obtaining an active-layer semiconductor in said first groove and on said first insulating layer; and obtaining a second insulating layer to be covered on said active-layer semiconductor; (c1) by using rapid melt epitaxy (RMG), said active-layer semiconductor comprising a filling part and a waveguide part after an annealing process to obtain a layer of a material selected from a group consisting of a single crystal and an alloy on said Si substrate and said at least one electronic device, said filling part being located in said first groove, said waveguide part being located on said first insulating layer and perpendicularly connected with said filling part; and obtaining an optical emitter and an optical receiver; and (d1) obtaining a third insulating layer to be covered on said optical emitter, said optical receiver, said waveguide part and said first insulating layer; after pattern-etching, obtaining a plurality of second grooves on said at least one electronic device, said optical emitter and said optical receiver; through said second grooves, obtaining a plurality of metal pads on said at least one electronic device, said optical emitter and said optical receiver to input and output electronic signals.
地址 Hsinchu City TW