发明名称 GROWTH OF SILICON AND BORON NITRIDE NANOMATERIALS ON CARBON FIBERS BY CHEMICAL VAPOR DEPOSITION
摘要 Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires.
申请公布号 US2015329360(A1) 申请公布日期 2015.11.19
申请号 US201514712523 申请日期 2015.05.14
申请人 University of Dayton 发明人 Li Lingchuan
分类号 C01B21/064;C23C16/46;C23C16/24;C01B33/029;C23C16/22 主分类号 C01B21/064
代理机构 代理人
主权项 1. A method of growing boron nitride nanotubes comprising: applying a catalyst solution to a carbon substrate comprising carbon fibers, the catalyst solution comprising iron nitrate and magnesium nitrate; providing a precursor mixture into a precursor vessel, the precursor mixture comprising a mixture of a first vapor deposition precursor and a second vapor deposition precursor, wherein the first vapor deposition precursor comprises boric acid and urea and the second vapor deposition precursor comprises iron nitrate, magnesium nitrate, and D-sorbitol; introducing the precursor mixture and the carbon substrate into a furnace; and heating the furnace to vaporize the precursor mixture in the presence of a flowing gas to facilitate growth of the boron nitride nanotubes on the carbon substrate.
地址 Dayton OH US