发明名称 |
GROWTH OF SILICON AND BORON NITRIDE NANOMATERIALS ON CARBON FIBERS BY CHEMICAL VAPOR DEPOSITION |
摘要 |
Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires. |
申请公布号 |
US2015329360(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201514712523 |
申请日期 |
2015.05.14 |
申请人 |
University of Dayton |
发明人 |
Li Lingchuan |
分类号 |
C01B21/064;C23C16/46;C23C16/24;C01B33/029;C23C16/22 |
主分类号 |
C01B21/064 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of growing boron nitride nanotubes comprising:
applying a catalyst solution to a carbon substrate comprising carbon fibers, the catalyst solution comprising iron nitrate and magnesium nitrate; providing a precursor mixture into a precursor vessel, the precursor mixture comprising a mixture of a first vapor deposition precursor and a second vapor deposition precursor, wherein the first vapor deposition precursor comprises boric acid and urea and the second vapor deposition precursor comprises iron nitrate, magnesium nitrate, and D-sorbitol; introducing the precursor mixture and the carbon substrate into a furnace; and heating the furnace to vaporize the precursor mixture in the presence of a flowing gas to facilitate growth of the boron nitride nanotubes on the carbon substrate. |
地址 |
Dayton OH US |