发明名称 DISCHARGE ELEMENT SUBSTRATE, RECORDING HEAD, AND RECORDING APPARATUS
摘要 A substrate includes first and second power supply lines, and units. Each unit includes common transistor, discharge elements and individual transistors. One of source and drain of the common transistor is connected to the first power supply line, first nodes of the discharge elements are connected to other of the source and drain, one of source and drain of each individual transistor is connected to a second node of the discharge element, the other is connected to the second power supply line. Channel of the common transistor is wider than those of the individual transistors. Arrangement direction of the units and arrangement direction of the discharge elements are first direction, the first and second power supply lines extend in the first direction, and the second power supply line is wider than that of the first power supply line.
申请公布号 US2015328888(A1) 申请公布日期 2015.11.19
申请号 US201514699497 申请日期 2015.04.29
申请人 CANON KABUSHIKI KAISHA 发明人 Endo Wataru;Ohmura Masanobu;Fujii Kazunari;Goden Tatsuhito
分类号 B41J2/14 主分类号 B41J2/14
代理机构 代理人
主权项 1. A discharge element substrate comprising a first power supply line, a second power supply line, and a plurality of discharge element units, wherein each of the plurality of discharge element units includes a common transistor, a plurality of discharge elements, and a plurality of individual transistors, in each of the plurality of discharge element units, one of a source and drain of the common transistor is connected to the first power supply line,first nodes of the plurality of discharge elements are connected to other of the source and drain of the common transistor,one of a source and drain of each of the plurality of individual transistors is connected to a second node of a corresponding discharge element of the plurality of discharge elements,other of the source and drain of each of the plurality of individual transistors is connected to the second power supply line in common, and,a channel width of the common transistor is greater than a channel width of each of the plurality of individual transistors, an arrangement direction of the plurality of discharge element units and an arrangement direction of the plurality of discharge elements in each of the discharge element units are a first direction, the first power supply line and the second power supply line extend in the first direction, and a width of the second power supply line when viewed in the first direction is greater than a width of the first power supply line when viewed in the first direction.
地址 Tokyo JP