| 摘要 |
PROBLEM TO BE SOLVED: To realize plasmon resonance in a room temperature condition more easily by using a field effect transistor in which a two-dimensional electron layer is a channel.SOLUTION: A semiconductor device includes a beam structure 104 comprising a first barrier wall layer 101, a channel layer 102, and a second barrier wall layer 103, and a gate electrode 106 is formed through a gate insulation layer 105, in a state of surrounding a periphery of the beam structure 104. An extension direction of the beam structure 104 is a channel length direction. The gate electrode 106 is arranged in a state of surrounding the entire periphery of a channel extending in the extension direction of the beam structure 104. |
